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MMFT960T1
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
(V GS = 0, I D = 10 m A)
Zero Gate Voltage Drain Current
V (BR)DSS
I DSS
60
?
?
?
?
10
Vdc
m Adc
(V DS = 60 V, V GS = 0)
Gate?Body Leakage Current
I GSS
?
?
50
nAdc
(V GS = 15 Vdc, V DS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(th)
1.0
?
3.5
Vdc
(V DS = V GS , I D = 1.0 mAdc)
Static Drain?to?Source On?Resistance
R DS(on)
?
?
1.7
W
(V GS = 10 Vdc, I D = 1.0 A)
Drain?to?Source On?Voltage
V DS(on)
Vdc
(V GS = 10 V, I D = 0.5 A)
(V GS = 10 V, I D = 1.0 A)
?
?
?
?
0.8
1.7
Forward Transconductance
g fs
?
600
?
mmhos
(V DS = 25 V, I D = 0.5 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
65
?
pF
Output Capacitance
Transfer Capacitance
(V DS = 25 V, V GS = 0, f = 1.0 MHz)
C oss
C rss
?
?
33
7.0
?
?
Total Gate Charge
Q g
?
3.2
?
nC
Gate?Source Charge
Gate?Drain Charge
(V GS = 10 V, I D = 1.0 A, V DS = 48 V)
Q gs
Q gd
?
?
1.2
2.0
?
?
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
5
1
4
T J = 25 ° C
0.8
T J = ? 55 ° C
T J = 25 ° C
V GS = 10 V
T J = 125 ° C
3
8V
7V
0.6
2
1
6V
5V
0.4
0.2
V DS = 10 V
4V
0
0
2
4
6
8
10
0
0
2
4
6
8
10
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 1. On?Region Characteristics
http://onsemi.com
2
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
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